View AZ358M-E1_3908813.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

low power dual operational amplifiers az358/358c data sheet 1 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited general description the az358/358c consists of two independent, high gain and internally frequency compensated operational amplifiers, it is specifically designed to operate from a single power supply. operation from split power sup- ply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. the az358/358c series are compatible with industry standard 358. az358c has more stringent input offset voltage than az358. the az358/358c series are av ailable in standard pack- ages of dip-8 and soic-8. features internally frequency compensated for unity gain large voltage gain: 100db (typical) low input bias current: 20na (typical) low input offset voltage: 2mv (typical) low supply current: 0.5ma (typical) wide power supply voltage range: single supply: 3v to 18v dual supplies: 1.5v to 9v input common mode voltage range includes ground large output voltage swing: 0v to v cc -1.5v power drain suitable for battery operation applications battery charger cordless telephone switching power supply figure 1. package types of az358/358c soic-8 dip-8
low power dual operational amplifiers az358/358c data sheet 2 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited figure 3. functional block diagram of az358/358c (each amplifier) functional block diagram (soic-8/dip-8) output 1 input 1+ input 1- gnd 8 v cc 7 output 2 6 input 2- 5 input 2+ 1 2 3 4 figure 2. pin configuration of az358/358c (top view) m package/p package q2 q4 q3 q1 q8 q9 6 a 4 a q10 q11 50 a q5 q6 q13 rsc cc 100 a q7 input- input+ output q12 v cc pin configuration
low power dual operational amplifiers az358/358c 3 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited data sheet package input offset voltage part number marking id packing type tin lead lead free tin lead lead free soic-8 maximum va l u e 5mv az358m AZ358M-E1 az358m AZ358M-E1 tube 5mv az358mtr az358mtr-e1 az358m AZ358M-E1 tape & reel 3mv az358cm az358cm-e1 358cm 358cm-e1 tube 3mv az358cmtr az358cmtr-e1 358cm 358cm-e1 tape & reel dip-8 maximum va l u e 5mv az358p az358p-e1 az358p az358p-e1 tube 3mv az358cp az358cp-e1 az358cp az358cp-e1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type blank: az358 e1: lead free blank: tin lead az358 - tr: tape and reel blank: tube c: az358c package m: soic-8 p: dip-8 ordering information
low power dual operational amplifiers az358/358c data sheet 4 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited parameter symbol value unit power supply voltage v cc 20 v differential input voltage v id 20 v input voltage v ic -0.3 to 20 v input current (v in <-0.3v) (note 2) i in 50 ma output short circuit to ground (one amplifier) (note 3) v cc 12v and t a = 25 o c continuous power dissipation (t a =25 o c) p d dip-8 830 mw soic-8 550 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10 seconds) t lead 260 o c note 1: stresses greater than thos e listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functiona l operation of the device under these conditions is not implied. exposure to "absolute maximum ratings" fo r extended periods may affect device reliability. note 2: this input current will only exist when the voltage at any of the input leads is driven negative. it is due to the collector-base junction of the inpu t pnp transistors becoming forward bias ed and thereby acting as input diode clamps. in addition to this diode actio n, there is also lateral npn parasiti c transistor action on the ic chip. this transistor action can cause the output volt ages of the op amps to go to the v cc voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. this is not destructive and normal output states will re-establish when the input voltage, which was ne gative, again returns to a value greater than -0.3v (at 25 o c) note 3: short circuits from the output to v cc can cause excessive heating and ev entual destruction. when consi- dering short circuits to ground, the maximum output current is approximately 40ma independent of the magni- tude of v cc . at values of supply voltage in excess of +12v, continuous short circuits can exceed the power dissi- pation ratings and cause eventual destruction. destruc tive dissipation can result from simultaneous shorts on all amplifiers. absolute maximum ratings (note 1) recommended operating conditions parameter symbol min max unit supply voltage v cc 318v ambient operating temperature range t a -40 85 o c
low power dual operational amplifiers az358/358c 5 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited data sheet parameter symbol test conditions min typ max unit input offset voltage v io v o =1.4v, r s =0 ? , v cc =5v to 15v az358 2 5 mv az358c 2 3 input bias current (note 4) i bias i in + or i in -, v cm =0v 20 200 na input offset current i io i in +-i in -, v cm =0v 5 50 na input common mode voltage range (note 5) v ir v cc =15v 0 v cc -1.5 v supply current i cc r l = , over full temperature range on all op amps v cc =15v 0.7 1.5 ma v cc =5v 0.5 1.2 large signal voltage gain g v v cc =15v, r l 2?, v o =1v to 11v 85 100 db common mode rejection ratio cmrr v cm =0v to (v cc -1.5)v 70 90 db power supply rejection ration psrr v cc =5v to 15v 70 90 db channel separation (note 6) cs f=1khz to 20khz -120 db output current source i source v in +=1v, v in -=0v, v cc =15v, v o =2v 20 40 ma sink i sink v in +=0v, v in -=1v, v cc =15v, v o =2v 10 18 ma v in +=0v, v in -=1v, v cc =15v, v o =0.2v 12 50 a output short circuit to ground i sc v cc =15v 40 60 ma output voltage swing v oh v cc =15v, r l =2k ? 12 v v cc =15v, r l =10k ? 12.5 13.5 v ol v cc =5v, r l =10k ? 5 20 mv note 4: the direction of the input current is out of the ic due to the pnp input stage. this current is essentially constant, independent of the state of the output so no loading change exists on the input lines. note 5: the input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3v (at 25 o c). the upper end of the common-mode voltage range is v cc -1.5v (at 25 o c), but either or both inputs can go to +18v without damages, independent of the magnitude of the v cc . note 6: due to proximity of external components, insure that coupling is not originating via stray capacitors between these external parts. this typically can be detected as this type of capacitance increases at higher frequen- cies. v cc =5v, gnd=0, t a =25 o c unless otherwise specified. electrical characteristics
low power dual operational amplifiers az358/358c data sheet 6 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited 0 2 4 6 8 101214161820 60 70 80 90 100 110 120 r l =2k ? r l =20k ? supply current drain (ma) voltage gain (db) figure 4. input voltage range figure 6. supply current figure 7. voltage gain figure 5. input current 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t a :0 o c to 85 o c 02468 0 1 2 3 4 5 6 7 8 positive negative -40-20 0 20406080100120 0 5 10 15 20 25 30 v cc =15v a i d ma v cc power supply voltage (v dc ) input voltage (v dc ) input current (na) temperature ( o c) power supply voltage (v) power supply voltage (v) typical performance characteristics
low power dual operational amplifiers az358/358c 7 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited data sheet figure 8. open loop frequency response figure 9. voltage follower pulse response 1hz 10hz 100hz 1khz 10khz 100khz 1mhz 0 10 20 30 40 50 60 70 80 90 100 110 v cc : 10v to 15v dc t a : -40 o c to 85 o c r 10m v in v cc /2 v o v cc 0.1uf frequency (hz) voltage gain (db) input time ( s) output voltage (v) voltage (v) v cc =15v r l = 2k ? figure 10. voltage follower pulse response (small signal) time ( s) output voltage (mv) input output 50pf v in v out 1k 10k 100k 1000k 0 5 10 15 20 output swing (v p-p ) figure 11. large signal frequency response r 2k r 100k r 1k v in +7v dc v o +15 v dc frequency (hz) v cc = 15v t a = 25 o c typical performance ch aracteristics (continued)
low power dual operational amplifiers az358/358c data sheet 8 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited -40-200 20406080 0 10 20 30 40 50 60 70 80 90 100 output current (ma) figure 12. output characteristics current sourcing fi gure 13. output characteristics current sinking figure 14. current limiting i o output voltage (v) output sink current (ma) output source current (ma) temperature ( o c) 1e-3 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 independent of v cc t a = 25 o c v o v cc i o v cc /2 typical performance ch aracteristics (continued) output voltage referenced to v cc (v) 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 10 v cc =15v v cc =5v t a = 25 o c v cc /2 vo v cc i o
low power dual operational amplifiers az358/358c 9 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited data sheet figure 17. dc summing amplifier figure 16. power amplifier figure 15. battery charger typical application r6 100k v o r5 100k r1 100k r2 100k r3 100k r4 100k +v 1 +v 2 +v 3 +v 4 1/2 az358/ c + - ac line smps r2 current sense r7 r8 battery pack r4 r3 az431 r5 r6 r1 opto isolator v cc gnd gnd - + 1/2 az358/c + - 1/2 az358/c r1 910k r2 100k r3 91k v in(+) v cc r l 1/2 az358/c - +
low power dual operational amplifiers az358/358c data sheet 10 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited figure 20. pulse generator figure 18. ac coupled non-inverting amplifier figure 21. dc coupled low-pass active filter figure 19. fixed current sources typical applicat ion (continued) r5 100k r3 100k r4 100 k r2 100k r1 1m v o v cc 1/2 az358 /c 0.001 f - + r2 16k r1 16k v in r3 100k 1/2 az358 /c r4 100k c2 0.01 f c1 0.01 f f 0 v 0 0 fo=1khz q=1 a v =2 + - v o v cc r4 3k r3 2k + - 2v + - 2v i1 i2 1ma 1/2 az358/c r1 2k r2 - + r4 100k v cc r3 1m r1 100k r2 1m c1 0.1 f c in r5 100k c o v o 1/2 az358/c r l 10k c2 10 f a v =1+r2/r1 a v =11 (as shown) - + ac r b 6.2k
low power dual operational amplifiers az358/358c 11 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited data sheet dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ mechanical dimensions
low power dual operational amplifiers az358/358c data sheet 12 aug. 2006 rev. 1. 2 bcd semiconductor manufacturing limited soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 4.800(0.189) 5.000(0.197) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 mechanical dimens ions (continued)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office 27b, tower c, 2070, middle shen nan road, shenzhen 518031, china tel: +86-755-8368 3987, fax: +86-755-8368 3166 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a tel: +1-408-988 6388, fax: +1-408-988 6386 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

▲Up To Search▲

Price & Availability of AZ358M-E1

	To Download AZ358M-E1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .